Product Summary

The BSP75N is an N channel vertical power FET in Smart Power Technology. It is fully protected by embedded protection functions.

Parametrics

BSP75N absolute maximum ratings: (1)Continuous drain source voltage: 60 V; (2)Drain source voltage for short circuit protection: 36 V; (3)Continuous input voltage: -0.2 to +10 V; (4)Peak input voltage VIN -0.2 to +20 V; (5)Continuous Input Current -0.2V ≤ VIN ≤ 10V: no limit, VIN<-0.2V or VIN>10V: IIN ≤ 2mA; (6)Operating temperature range: -40 to +150℃; (7)Storage temperature range: -55 to +150℃; (8)Power dissipation (DC): 1.8 W; (9)Unclamped single pulse inductive energy: 550 mJ at ID(ISO) = 0.7 A; Vbb =32V.

Features

BSP75N features: (1)Logic Level Input; (2)Input protection (ESD); (3)Thermal shutdown with auto restart; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation.

Diagrams

BSP75N block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSP75NTA
BSP75NTA
Diodes Inc.
Power Switch ICs - Power Distribution Self-Protect 60V Sw
Data Sheet
0-1: $0.79
1-10: $0.70
10-100: $0.48
100-500: $0.43
500-1000: $0.31
BSP75N
BSP75N
Infineon Technologies
Power Switch ICs - Power Distribution Smart Low Side 1 Ch 60 V 1.8 W
Data Sheet
0-1: $0.55
1-10: $0.50
10-100: $0.39
100-500: $0.31