IRF540N

100V, Single N-Channel HEXFET Power MOSFET, TO-220AB, Ultra Low On-Resistance

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Price:: US $0.50~0.55 / piece [Get Latest Price]

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PartNumber:: IRF540N

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-11-03

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Part Number:IRF540N
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Product Summary

The IRF540N advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET IRF540N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package of the IRF540N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF540N absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 33A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 23 A; (3)IDM, Pulsed Drain Current: 110A; (4)PD @TC = 25℃, Power Dissipation: 130 W; Linear Derating Factor: 0.87 W/℃; (5)VGS, Gate-to-Source Voltage: ± 20 V; (6)IAR, Avalanche Current: 16 A; (7)EAR, Repetitive Avalanche Energy: 13 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 7.0 V/ns; (9)TJ, Operating Junction: -55 to + 175℃; (10)TSTG, Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).

Features

IRF540N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.